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DSA0074424.pdf
Manufacturer
Samsung Electronics
Partial File Text
SSH4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate C
Type
Original
ECAD Model
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SSH4N90AS