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    DSA2IH00110602.pdf

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    • MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF710 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed power s
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    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

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