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DSAIHSC000104763.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TIM4951-16 Internally Matched Power GaAs FETs (C-Band) Features ⢠High power - P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz ⢠High gain - G-idB = 9.0 dB at 4.
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