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DSA00428651.pdf
Manufacturer
Toshiba
Partial File Text
2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = -2 V, IC = -2 A) · Low satu
Datasheet Type
Original
ECAD Model
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2SB1495
2SD2257
b1495