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Scans-00156870.pdf
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CEM9435 _March 1998 P-Channel Enhancement Mode MOSFET FEATURES ⢠-30V, -5.1 A, Rds(on)=55itiQ @Vgs=-10V. ftds(on)=105mQ @Vgs=-4.5V. ⢠Super high dense cell design for extremely low Rds(on
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ECAD Model
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