DSA00242298.pdf
- Fairchild Semiconductor
- FDC8886 N-Channel Power Trench® MOSFET November 2011 FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 m Features Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 m at VG
- Original
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