DSA2IH00101078.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POWER GaAs FET DESCRIPTION The MGFQ9Q6B, GaAs FET w ith an N-charmel schottky gate, is designed fo r use in UHF band amplifiers. OUTLINE
Type Scan
ECAD Model

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