DSA00481157.pdf
-
IXYS
-
DE150-201N09A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
VDSS
Test Conditions
VDSS
TJ = 25°C to 150°C
200
VDGR
TJ = 25°C to 150°
-
Original
-
-
Part pricing, stock, data attributes from Findchips.com