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DSAIHSC000104256.pdf
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TOSHIBA MICROWAVE POWER GaAs FET J S 8 8 5 6 -A S Power GaAs FETs (Chip Form) Features ⢠High power - P 1dB = 3 3 .5 dBm at f = 14.5 G H z ⢠High gain - G idB = 6 .5 dB at f = 14.5 G
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ECAD Model
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