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DSA00323983.pdf
Manufacturer
Infineon Technologies
Partial File Text
IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS®2 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C
Type
Original
ECAD Model
Part Details
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06CNE8N