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    DSA00153845.pdf

    • Cree
    • PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree's CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high effic
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    DSA00153845.pdf preview Download Datasheet

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