DSAEDA00068537.pdf
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Eudyna Devices
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FHX35X
GaAs FET & HEMT Chips
FEATURES
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Low Noise Figure: 1.2dB (Typ.)@f=12GHz
High Associated Gain: 10.0dB (Typ.)@f=12GHz
Lg ⤠0.25µm, Wg = 280µm
Gold Gate Metallization
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Original
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Part pricing, stock, data attributes from Findchips.com