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    DSA2IH00214351.pdf

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    • TYPE 2N5386 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4301 · 50 W at 100°C Case Temperature · M
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    2N5386 Diode LT 5228 Diode LT 5230 transistor LT 5230

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