DSA00305496.pdf

Manufacturer Hitachi
Partial File Text 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance N-channel: RDS(on) 0.4 , VGS = 10 V, I D = 1.5 A P-channel: RDS(on
Type Original
ECAD Model
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