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    DSAE009839.pdf

    • Infineon Technologies
    • IPB025N08N3 G OptiMOS®3 Power-Transistor Product Summary Features V DS 2.5 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal lev
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    DSAE009839.pdf preview Download Datasheet

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