DSA2IH0099138.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to
Type Scan
ECAD Model

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