DSAH00391088.pdf
- NEC
- PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES · OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 · 4 PIN MINI MOLD PACKAGE: NE6
- Original
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