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DSA00278306.pdf
Manufacturer
Hitachi Semiconductor
Partial File Text
3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B (Z) 3rd. Edition Mar. 2001 Application UHF RF amplifier Features · Low noise figure. NF = 2.0 dB typ. at f = 900 MHz · Capable of low v
Type
Original
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