BLL1214-35,112 datasheet
- NXP Semiconductors
- L-band radar LDMOS driver transistor - Application: L-band Radar ; Description: L-Band Radar LDMOS RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 1200 - 1400 MHz; Load power: 35 W; Operating voltage: 36 VDC; Power gain: 14 dB; Pulse width: 1000 us; Package: SOT467C (LDMOST); Container: Blister pack
- Original
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