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Scans-00149839.pdf
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TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM8596-8 FEATURES: â HIGH POWER â BROAD BAND INTERNALLY MATCHED PldB = 39.5 dBm at 8,5 GHz to 9.6 GHz â HIGH G
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ECAD Model
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TIM8596-8