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    DSAQ00357994.pdf

    • Toshiba
    • TC58NVG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Elect
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    48-P-1220-0 tc58nvg tc58nvg0s3e TC58NVG0S3ET tc58nvg0s3eta TC58NVG0S3ETAI0

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