The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DSA0072739.pdf
Manufacturer
Toshiba
Partial File Text
GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector E
Datasheet Type
Original
ECAD Model
Part Details
Part pricing, stock, data attributes from Findchips.com
DSA0072739.pdf preview
Download Datasheet
User Tagged Keywords
GT60M303
GT60M303 application
GT60M303 circuit
Price & Stock Powered by
Findchips