DSAZIHA100098551.pdf
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Forward International Electronics
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UF151
N-Channel Enhancement Mode MOSFET
Features
Applications
20V/3.6A , RDS(ON)=60mΩ(typ.) @ VGS=4.5V
RDS(ON)=80mΩ(typ.) @ VGS=1.8V
Super High Dense Cell Design for Extremely Low RDS(ON)
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Original
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