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    Scans-00151758.pdf

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    • TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIMI 213-10 FEATURES : ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz ■ H
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