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DSA2IH0061416.pdf
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3 1 HARRIS A ugust 1991 Features ยท 8.0A and 9.2A , 8 0 V - 100V IRF120, IRF121 IRF122, IRF 123 N-Channel Enhancem ent-M ode Power Field-Effect Transistors Package T 0 -2 0 4 A A BOTTOM VIEW
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ECAD Model
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