DSA00588109.pdf
- Renesas Electronics
- Preliminary Datasheet RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features · Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) · Low leakage curr
- Original
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