DSA2IH0099134.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2407A MICROWAVE POW ER GaAs F ET DESCRIPTION The M G F 2 4 0 7 A , power GaAs F E T w ith an fiers. N-channel schottky gate, is designed fo r use in S
Type Scan

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