DSAIH000132929.pdf

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Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR MICROW AVE POW ER GaAs TECHNICAL DATA FEATURES : LOW INTERMODULATION DISTORTION IMo = --45 dBc at Po = 31.5 dBm, Single Carrier Level HIGH POWER PjdB = 42.
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DSAIH000132929.pdf preview Download Datasheet