DSAZIHA100017235.pdf
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American Microsemiconductor
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2G306 Transistors
Ge PNP Lo-Pwr BJT
Military/High-RelN
V(BR)CEO (V)20
V(BR)CBO (V)20
I(C) Max. (A)300m
Absolute Max. Power Diss. (W)200m
Maximum Operating Temp (øC)100â
I(CBO) Max. (A)2.0uÃ
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Original
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