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    • MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The MGFC4453A low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band amplifiers. OUTL
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    a02 Transistor rf FET Spec sheet fet transistor a03 GaAs FET HEMT Chips InGaAs HEMT mitsubishi low noise x band hemt transistor MGFC4453A
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