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    DSAZIHA100017489.pdf

    • American Microsemiconductor
    • 2N1176 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)10ã V(BR)CBO (V)10 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)25u
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