DSAZIHA100056309.pdf
- American Microsemiconductor
- 1711-1802 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.
- Original
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