DSA2IH00126021.pdf

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Partial File Text PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES__________________________ · LOW NOISE: Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f =
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Alternative Parts
UPA835TF-T1 UPA835TF-T1

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