DSAIH00084666.pdf

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Partial File Text MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D A x ia l Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S t
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Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

1N5818-GT3 1N5818-T3

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