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Scans-00102303.pdf
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IRFF:422,423 1.4 AMPERES 500, 450 VOLTS rDS(ON) = 4-0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with exce
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F-423
irf 260
IRFF422
IRFF423
tr f422
transistor f422
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