DSAISS00031382.pdf
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International Rectifier
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IRLHS6342PbF
HEXFET® Power MOSFET
VDS
30
V
VGS
±12
V
RDS(on) max
15.5
mΩ
(@VGS = 4.5V)
Qg (typical)
ID
11
(@TC (Bottom) = 25°C)
12
nC
i
A
TOP
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Original
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