BSH105,215 datasheet
- NXP Semiconductors
- N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 1.05 A; Q<sub>gd</sub> (typ): 1.4 nC; R<sub>DS(on)</sub>: 200@4.5V250@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
- Original
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