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    DASF0051043.pdf

    • Toshiba
    • 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm · Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA · Small package su
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    DASF0051043.pdf preview Download Datasheet

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