DSA00187211.pdf

Manufacturer -
Partial File Text CET453N March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 8A , RDS(ON)=28m @VGS=10V. RDS(ON)=42m @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and
Type Original
ECAD Model

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