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DSAIHSC000104255.pdf
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TOSHIBA MICROWAVE POWER GaAs FET JS8892-AS Power GaAs FETs (Chip Form) Features ⢠High power - P 1dB = 2 1 .0 dBm at f = 2 3 GHz ⢠High gain - G1dB = 6 .5 dB at f = 23 GHz ⢠Suitabl
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ECAD Model
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