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DSA00170203.pdf
Manufacturer
Toshiba
Partial File Text
HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications Unit: mm +0.2 2.8 -0.3 +0.2 1.6 -0.1 High-spee
Datasheet Type
Original
ECAD Model
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HN4B101J