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DSASW00373740.pdf
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Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells Yuri Tkachev and Alexander Kotov Silicon Storage Technology, Inc. Sunnyvale, USA
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Original
ECAD Model
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User Tagged Keywords
4156C
flash "high temperature data retention" mechanism
floating-gate
QUANTUM CAPACITIVE
quantum dot
split-gate flash
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