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    DSASW00135401.pdf

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    • PROCESS CP319 Power Transistor NPN - Silicon Power Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 87 x 87 MILS Die Thickness 9.0 MILS Base Bonding Pad
    • Original

    DSASW00135401.pdf preview Download Datasheet

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    CP319 CZTA44HC TIP47 TIP48 TIP50
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