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    DASF0033279.pdf

    • Toshiba
    • 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-59 Ab
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    DASF0033279.pdf preview Download Datasheet

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    1SS377

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