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    DSAIHSC000104772.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET T IM 1 4 1 4 - 8 L Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm,
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