DSA2IH00102086.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V7177A W ifi Si>n'K tftwW gxs 7 .1 -- 7.7GHz BAND 8W INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The MGFC39V7177A is an internally impedance-mat
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ECAD Model

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