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DSAIHSC000104835.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features ⢠Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level ⢠High power - P-idB = 42.5 dBm at 7.1
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