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    ScansEX22639.pdf

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    • FLM4450-4E Internally Matched Power GaAs FETs FEATURES • High Output Power: P1dB = 36dBm (Typ.) • High Gain: G1dB = 11 dB (Typ.) • High PAE: r,add = 33% (Typ.) • Low IM3 = -45dBc@Po =
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    FLM4450-4E FUJITSU MICROWAVE
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