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DSA2IH00202640.pdf
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1530 HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage : Vd ss *200V(MIN.) 20.5MAX ff 3.3 ±0.2
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Scan
ECAD Model
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