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    DSA008262.pdf

    • IXYS
    • High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A 3.0V VCE(sat) Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditio
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    DSA008262.pdf preview Download Datasheet

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    IC100 IXBK64N250 IXBX64N250 PLUS247

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